rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 1402 20 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . rf micro devices ? and rfmd ? are trademarks of rfmd, llc. bluetooth is a trademark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks, and registered trademarks are the property of their respective owners. ?2013, rf micro d evices, inc. 1 of 3 S10040180P1 gaas push pull hybrid 4 0 mhz to 1 0 00 mhz the S10040180P1 is a hybrid push pull amplifier module. the part employs gaas die and is operated from 40mhz to 1000mhz. it provides excellent linearity and superior return loss performance with low noise and optimal reliability. package: sot - 115j features excellent linearity superior r eturn loss performance extremely low distortion optimal reliability extremely low noise unconditionally stable under all terminations 18 .0 db min. gain at 1 0 00 mhz 2 6 0 ma max. at 24v dc applications 4 0 mhz to 1 0 00 mhz cat v amplifier systems ordering information S10040180P1 box with 50 pieces absolute maximum rat ings parameter rating unit rf input voltage (single tone) 65 dbmv dc supply over - voltage (5 minutes) 30 v storage temperature - 40 to +100 c operating mounting base temperature - 30 to +100 c caution! esd sensitive device. rohs (restriction of hazardous substances): compliant per eu directive 2011/65/eu. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical performance or functional operation of the device under absolute maximum r ating conditions is not implie d. S10040180P1
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 1402 20 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of p atents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 3 S10040180P1 nominal operating parameters parameter specification unit condition min typ max general performance v + = 24v; t mb = 30c; z s = z l = 75 power gain 1 8 .0 db f = 50 mhz 1 8 .0 19.5 db f = 1 0 00 mhz slope [ 1 ] 0.5 1.5 db f = 4 0 mhz to 1 0 00 mhz flatness of frequency response 0.8 db f = 4 0 mhz to 1 0 00 mhz (peak to valley) input return loss 20.0 db f = 4 0 mhz to 160 mhz 18.0 db f = 160 mhz to 870 mhz 15.0 db f = 870 mhz to 1000 mhz output return loss 20.0 db f = 4 0 mhz to 160 mhz 18.0 db f = 160mhz to 870 mhz 15.0 db f = 870 mhz to 1000 mhz noise figure 3.0 4.0 db f = 50mhz to 1 0 00mhz total current consumption (dc) 250.0 260.0 ma distortion data 40mhz to 870 mhz v + = 24v; t mb = 30c; z s = z l = 75 ctb - 68 - 66 dbc 132 ch. flat, v o = 4 0 dbmv [2] xmod - 59 - 57 dbc cso - 68 - 66 dbc 1. the slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency. 2. 132 channels, ntsc f requency raster: 55.25mhz to 853.25 mhz, +4 0 dbmv flat output level. composite second order (cso) - the cso parameter (both sum and difference products) is defined by the ncta. composite triple beat (ctb) - the c tb parameter is defined by the ncta. cross modulation (xmod) - cross modulation (xmod) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the carrier being tested.
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 1402 20 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of p atents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 3 S10040180P1 package drawing (dimensions in millimeters) 13, 4 1 2 3 5 7 8 9 r o q m 5 10mm 0 scale b n l f a d h ? g t s p j u i e c k european projection n o m i n a l m i n m a x a 4 4 , 6 0 , 2 4 4 , 4 4 4 , 8 b 1 3 , 6 0 , 2 4 4 , 4 1 3 , 8 c 2 0 , 4 0 , 5 1 9 , 9 2 0 , 9 d 8 0 , 1 5 7 , 8 5 8 , 1 5 e 1 2 , 6 0 , 1 5 1 2 , 4 5 1 2 , 7 5 f 3 8 , 1 0 , 2 3 7 , 9 3 8 , 3 g 4 + 0 , 2 / - 0 , 0 5 3 , 9 5 4 , 2 h 4 0 , 2 3 , 8 4 , 2 i 2 5 , 4 0 , 2 2 5 , 2 2 5 , 6 j u n c 6 - 3 2 - - k 4 , 2 0 , 2 4 , 0 4 , 4 l 2 7 , 2 0 , 2 2 7 , 0 2 7 , 4 m 1 1 , 6 0 , 5 1 1 , 1 1 2 , 1 n 5 , 8 0 , 4 5 , 4 6 , 2 o 0 , 2 5 0 , 0 2 0 , 2 3 0 , 2 7 p 0 , 4 5 0 , 0 3 0 , 4 2 0 , 4 8 q 2 , 5 4 0 , 3 2 , 2 4 2 , 8 4 r 2 , 5 4 0 , 5 2 , 0 4 3 , 0 4 s 2 , 5 4 0 , 2 5 2 , 2 9 2 , 7 9 t 5 , 0 8 0 , 2 5 4 , 8 3 5 , 3 3 u 5 , 0 8 0 , 2 5 4 , 8 3 5 , 3 3 p i n n a m e 1 i n p u t 2 - 3 g n d 4 5 + v b 6 7 - 8 g n d 9 o u t p u t pinning: notes:
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